| PART |
Description |
Maker |
| PYA28C16BE-20CWM PYA28C16BE-20CWMB PYA28C16BE-20LM |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
|
Pyramid Semiconductor C...
|
| SHM120F SHM140F SHM40F SHM60F SHM80F SHM100F SHM15 |
50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| LC78840M |
Four-times or Eight-times Oversampling Digital Filter
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MJ15023 MJ15025 ON1984 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| SPD4947SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
Solid States Devices, I...
|
| AD7910AKS-500RL7 AD7920AKS-500RL7 AD7920AKS-REEL7 |
250 kSPS, 10-/12-Bit ADCs in 6-Lead SC70 250 kSPS的，10-/12-Bit模数转换引脚SC70
250 kSPS, 10-/12-Bit ADCs in 6-Lead SC70 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO6
|
Analog Devices, Inc.
|
| 1M110ZS10 1M120ZS10 1M130ZS10 1M150ZS10 1M160ZS10 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 1% tolerance.
1.0 WATT SURMETIC 30 SILICON ZENER DIODES
4 PR #24 DATATWIST PVC
1701A CMP 4BP24 BK 1000F REELEX
1701A CMP 4BP24 GY 1000F SP 1.0瓦SURMETIC 30硅稳压二极管
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -2% tolerance.
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
